DISCRETE SEMICONDUCTORS DATA SHEET BZX79 series Voltage regulator diodes NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES
• Total power dissipation: max. 500 mW• Two tolerance series: ±2%, and approx. ±5%• Working voltage range: nom. 2.4 to 75 V (E24 range)• Non-repetitive peak reverse power dissipation:
APPLICATIONS
• Low voltage stabilizers or voltage references. DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from 2.4 to 75 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). PARAMETER CONDITIONS
Device mounted on a printed circuit-board without metallization pad; lead length max.
Tie-point temperature ≤ 50 °C; max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series Tj = 25 °C unless otherwise specified. PARAMETER CONDITIONS PARAMETER CONDITIONS
Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK rdif (Ω) SZ (mV/K) REVERSE CURRENT at IZtest = 5 mA at IZtest = 5 mA at f = 1 MHz; at tp = 100 μs; Tamb = 25 °C Tol. approx. Tol. ±2% (B) Ztest = 1 mA at IZtest = 5 mA
Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified. WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK rdif (Ω) SZ (mV/K) REVERSE CURRENT at IZtest = 2 mA at IZtest = 2 mA at f = 1 MHz; at tp = 100 μs; Tamb = 25 °C Tol. approx. Tol. ±2% (B) Ztest = 0.5 mA at IZtest = 2 mA THERMAL CHARACTERISTICS PARAMETER CONDITIONS
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see and note
Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
(1) Tj = 25 °C (prior to surge). (2) T
Typical forward current as a function of
reverse power dissipation versus duration. BZX79-B/C2V4 to BZX79-B/C4V3. BZX79-B/C4V7 to BZX79-B/C12.
Temperature coefficient as a function of
Temperature coefficient as a function of
PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads DIMENSIONS (mm are the original dimensions)
1. The marking band indicates the cathode. REFERENCES EUROPEAN ISSUE DATE PROJECTION DATA SHEET STATUS DOCUMENT DEFINITION
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
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above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for
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Applications ⎯ Applications that are described herein for
Characteristics sections of this document, and as such is
any of these products are for illustrative purposes only.
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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions NXP Semiconductors Customer notification
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